Doctoral Thesis - Modelling of strain effects in power MOSFETs

Villach (Austria)

Your Role

• Objective: Predict strain effects in low voltage and medium voltage power metal-oxide-semiconductor field-effect transistors via technology computer-aided design (TCAD) to steer performance gains from mobility enhancement
• Simulation: Build and run technology computer-aided design (TCAD) setups for coupled mechanical stress and electrical behavior in devices
• Calibration: Adjust mechanical stress models and parameters against process conditions and available experimental data to ensure realistic results
• Process Steps: Cover material deposition, crystal growth and etching when calibrating and simulating
• Coupling: Link process-induced stress to electrical characteristics and carrier mobility models
• Defect Risk: Pinpoint critical stress locations to avoid crystal defects in future device designs

Further Information:
Type of employment: Temporary / Full-time (flexible working hours from Monday to Friday between 6 a.m. and 7 p.m.)
Duration: 3 years
The thesis will be written in cooperation with our academic partner at University of Twente.

Your Profile

• Education: Completed Master degree in Electrical Engineering or Physics
• Language Skills: English fluent, German as a plus
• Specialization: Focus in semiconductor physics, microelectronics, power devices, simulation or semiconductor technology preferred
• Devices: Understanding of power metal-oxide-semiconductor field-effect transistors and their operating principles
• Simulation: Familiarity with device and process simulation methods, including technology computer-aided design (TCAD)
• Processing: Knowledge of semiconductor fabrication steps such as deposition, epitaxy and etching

Please attach the following documents to your application:
- Your CV
- Motivation letter
- Copy of your master degree certificate if already available
- Otherwise: copy of your latest study transcript

This position is subject to the collective agreement for workers and employees in the electrical and electronics industry. The salary for this position is EUR 3.715,00 gross p.m. (full-time basis).

Contact: Sabrina Nindler